SEMICONDUCTOR DEVICES HAVING THROUGH-CONTACTS AND

专利名称：SEMICONDUCTOR DEVICES HAVING

THROUGH-CONTACTS AND RELATEDFABRICATION METHODS

发明人：Ralf RICHTER,Jens HEINRICH,Holger

SCHUEHRER

申请号：US12968068申请日：20101214

公开号：US20120146106A1公开日：20120614

专利附图：

摘要：Apparatus for semiconductor device structures and related fabrication methods

are provided. One method for fabricating a semiconductor device structure involvesforming a layer of dielectric material overlying a doped region formed in a

semiconductor substrate adjacent to a gate structure and forming a conductive contact inthe layer of dielectric material. The conductive contact overlies and electrically connectsto the doped region. The method continues by forming a second layer of dielectricmaterial overlying the conductive contact, forming a voided region in the second layeroverlying the conductive contact, forming a third layer of dielectric material overlying thevoided region, and forming another voided region in the third layer overlying at least aportion of the voided region in the second layer. The method continues by forming aconductive material that fills both voided regions to contact the conductive contact.

申请人：Ralf RICHTER,Jens HEINRICH,Holger SCHUEHRER

地址：Dresden DE,Wachau DE,Dresden DE

国籍：DE,DE,DE

更多信息请下载全文后查看