MCCFeatures
omponents21201 Itasca Street Chatsworth
!\"#$% !\"#
MMBT4401
• Surface Mount SOT-23 Package
• Capable of 350mWatts of Power Dissipation
C
Pin Configuration
Top View
NPN GeneralPurpose Amplifier
SOT-23D2 X
B
E
AElectrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage* (IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage (IC=10mAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=0.1mAdc, IC=0)Base Cutoff Current
(VCE=35Vdc, VBE=0.4Vdc)Collector Cutoff Current (VCE=35Vdc, VBE=0.4Vdc)DC Current Gain*
(IC=0.1mAdc, VCE=1.0Vdc) (IC=1.0mAdc, VCE=1.0Vdc) (IC=10mAdc, VCE=1.0Vdc) (IC=150mAdc, VCE=1.0Vdc) (IC=500mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage (IC=150mAdc, IB=15mAdc) (IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage (IC=150mAdc, IB=15mAdc) (IC=500mAdc, IB=50mAdc)
Min40606.0
0.10.1Max
Units Vdc Vdc Vdc µAdc
GFOFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX
CBEHJ µAdc
KDIMENSIONSON CHARACTERISTICS hFE
204080
100 30040
0.40.75
0.75
0.951.2
Vdc
DIMABCDEFGHJKINCHESMIN.110.083.047.035.070.018.0005.035.003.015 VCE(sat)
VBE(sat)
Vdc
MAX.120.098.055.041.081.024.0039.044.007.020MMMIN2.802.101.20.891.78.45.013.89.085.37MAX3.042.641.401.032.05.60.1001.12.180.51NOTESMALL-SIGNAL CHARACTERISTICS
fT Ccb Ceb
Current Gain-Bandwidth Product
(IC=20mAdc, VCE=10Vdc, f=100MHz) 250 MHzCollector-Base Capacitance
(VCB=5.0Vdc, IE=0, f=1.0MHz) 6.5 pFEmitter-Base Capacitance
(VBE=0.5Vdc, IC=0, f=1.0MHz) 30.0 pF
15
2022530
ns ns ns ns
Suggested SolderPad Layout.031.800.035.900.0792.000inchesmmSWITCHING CHARACTERISTICS
td Delay Time(VCC=30Vdc, VBE=0.2Vdc tr Rise TimeIC=150mAdc, IB1=15mAdc) ts Storage Time(VCC=30Vdc, IC=150mAdc tf Fall TimeIB1=IB2=15mAdc)*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
.037.950.037.950www.mccsemi.com
元器件交易网www.cecb2b.com
MMBT4401
DC Current Gain vs Collector Current360300240hFE
18012060
VBE(ON) - (V)
0.6
0.4TA = 125°C0.20
VCE = 10V1.21.00.8
TA = 25°CMCCBase-Emitter ON Voltage vsCollector Current
VCE = 10V110
IC (mA)
1001000110
100
IC - (mA)
1000
Collector-Emitter SaturationVolatge vs Collector Current.24.20.16
VCE(SAT) - (V)
.12.08.0401.0
VBE(SAT) - (V)
IC/IB = 10TA = 25°C1.11.00.90.80.70.6
Base-Emitter SaturationVoltage vs Collector Current
IC/IB = 10TA = 25°C10
IC - (mA)
1001000
0.51.0
10IC - (mA)
100
1000
Collector-Base Diode ReverseCurrent vs Temperature100
4032
VCB = 20V10
ICBO - (mA)
1.0
pF
24168
0.1
0
Input Capacitance vsReverse Bias Voltage
f = 1MHzCeb
255075TJ - (°C)
100125150
00.1
1.0Volts - (V)
10
www.mccsemi.com
元器件交易网www.cecb2b.com
MMBT4401
Maximum Power Dissipation vsAmbient Temperature800
108
TO-92pF
64
200
SOT-23200.1
MCCOutput Capacitance vsReverse Bias Voltage
f = 1MHz600
PD(MAX) - (mW)
400
Ccb
0
050100TA - (°C)
150200
1.0Volts - (V)
10
www.mccsemi.com
因篇幅问题不能全部显示，请点此查看更多更全内容