专利名称：STRUCTURE AND METHOD FOR REDUCING
FORWARD VOLTAGE ACROSS A SILICONCARBIDE-GROUP III NITRIDE INTERFACE
发明人：Adam William Saxler申请号：US11465470申请日：20060818
公开号：US20080042141A1公开日：20080221
专利附图：
摘要：A structure is disclosed that reduces the forward voltage across the interfacebetween silicon carbide and Group III nitride layers. The structure includes a conductive
silicon carbide substrate and a conductive layer of aluminum gallium nitride on the siliconcarbide substrate. The aluminum gallium nitride layer has a mole fraction of aluminumthat is sufficient to bring the conduction bands of the silicon carbide substrate and thealuminum gallium nitride into close proximity, but less than a mole fraction of aluminumthat would render the aluminum gallium nitride layer resistive.
申请人：Adam William Saxler
地址：Durham NC US
国籍：US
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